Справочник MOSFET. HM100N15A

 

HM100N15A MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: HM100N15A
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 370 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 150 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 100 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 138 nC
   trⓘ - Время нарастания: 30 ns
   Cossⓘ - Выходная емкость: 640 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.011 Ohm
   Тип корпуса: TO-220

 Аналог (замена) для HM100N15A

 

 

HM100N15A Datasheet (PDF)

 ..1. Size:596K  cn hmsemi
 hm100n15a.pdf

HM100N15A HM100N15A

HM100N15AN-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. General Features VDS =150V,ID =100A Schematic diagram RDS(ON)

 6.1. Size:553K  cn hmsemi
 hm100n15.pdf

HM100N15A HM100N15A

HM100N15 N-Channel Enhancement Mode Power MOSFET Description The HM100N15 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =140V,ID =100A RDS(ON)

 8.1. Size:704K  cn hmsemi
 hm100n03.pdf

HM100N15A HM100N15A

HM100N03N-Channel Enhancement Mode Power MOSFET Description The HM100N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =100A RDS(ON)

 8.2. Size:759K  cn hmsemi
 hm100n03k.pdf

HM100N15A HM100N15A

HM100N03KN-Channel Enhancement Mode Power MOSFET Description The HM100N03K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =100A RDS(ON)

 8.3. Size:428K  cn hmsemi
 hm100n03d.pdf

HM100N15A HM100N15A

HM100N03DDescription The HM100N03D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =100A RDS(ON)

 8.4. Size:544K  cn hmsemi
 hm100n02k.pdf

HM100N15A HM100N15A

Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =100A RDS(ON)

 8.5. Size:426K  cn hmsemi
 hm100n06f.pdf

HM100N15A HM100N15A

N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Feature VDS =60V,ID =100A RDS(ON)

 8.6. Size:556K  cn hmsemi
 hm100n20t.pdf

HM100N15A HM100N15A

H N-Channel Enhancement Mode Power MOSFET Description The HM100N20T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =100A RDS(ON)

 8.7. Size:772K  cn hmsemi
 hm100n02.pdf

HM100N15A HM100N15A

HM100N02Description The HM100N02 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =100A RDS(ON)

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: HM16N50

 

 
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