HM1060E Specs and Replacement
Type Designator: HM1060E
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 600 V
|Id| ⓘ - Maximum Drain Current: 0.1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 120 Ohm
Package: SOT23
HM1060E substitution
- MOSFET ⓘ Cross-Reference Search
HM1060E datasheet
Detailed specifications: HM100N03D, HM100N03K, HM100N06F, HM100N15, HM100N15A, HM100N20T, HM100P03, HM100P03K, IRFZ46N, HM10N03D, HM10N06Q, HM10N10I, HM10N10KA, HM10N10Q, HM10N15D, HM10N60, HM10N60F
Keywords - HM1060E MOSFET specs
HM1060E cross reference
HM1060E equivalent finder
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HM1060E substitution
HM1060E replacement
Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: BSC014N06NSSC | BSC030N03MS
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