All MOSFET. HM1060E Datasheet

 

HM1060E Datasheet and Replacement


   Type Designator: HM1060E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 600 V
   |Id| ⓘ - Maximum Drain Current: 0.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 120 Ohm
   Package: SOT23
 

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HM1060E Datasheet (PDF)

 ..1. Size:364K  cn hmsemi
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HM1060E

Depletion-Mode Power MOSFET General Features ESD improved Capability BVDSX RDS(ON) (Max.) IDSS,min Depletion Mode (Normally On) Proprietary Advanced Planar Technology 600V 120 100mA Rugged Polysilicon Gate Cell Structure Fast Switching Speed RoHS Compliant

Datasheet: HM100N03D , HM100N03K , HM100N06F , HM100N15 , HM100N15A , HM100N20T , HM100P03 , HM100P03K , STP65NF06 , HM10N03D , HM10N06Q , HM10N10I , HM10N10KA , HM10N10Q , HM10N15D , HM10N60 , HM10N60F .

History: SI4838DY | KI2303

Keywords - HM1060E MOSFET datasheet

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