HM1207E
MOSFET. Datasheet pdf. Equivalent
Type Designator: HM1207E
Marking Code: 0615'
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.5
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 70
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 20
V
|Id|ⓘ - Maximum Drain Current: 0.1
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 15
Ohm
Package:
SOT23
HM1207E
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HM1207E
Datasheet (PDF)
..1. Size:897K cn hmsemi
hm1207e.pdf 
HM1207EUltrahigh Threshold Voltage Depletion-Mode Power MOSFET General Features ESD improved Capability BVDSX VGS(off),max IDSS,min Depletion Mode (Normally On) Proprietary Advanced Planar Technology 70V -20V 120mA Proprietary Advanced Ultrahigh Vth Technology RoHS Compliant Halogen-free available SOT-23DDrainApplications Source Quick
9.1. Size:91K chenmko
chm1203evjgp.pdf
CHENMKO ENTERPRISE CO.,LTDCHM1203EVJGPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 12 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. ( SO-8 )* Super high density cell design for extremely low RDS(ON). ( )4.06 0.160( )3.70 0.146* High p
9.2. Size:977K cn hmsemi
hm120n04.pdf
HM120N04N-Channel Enhancement Mode Power MOSFET Description The HM120N04 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =120A Schematic diagram RDS(ON)
9.3. Size:594K cn hmsemi
hm120n03.pdf
HM120N03N-Channel Enhancement Mode Power MOSFET Description The HM120N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =120A RDS(ON)
9.4. Size:711K cn hmsemi
hm120n04k.pdf
HM120N04KN-Channel Enhancement Mode Power MOSFET Description The HM120N04K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =120A RDS(ON)
9.5. Size:526K cn hmsemi
hm120n04i.pdf
Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =120A RDS(ON)
9.6. Size:904K cn hmsemi
hm120n04d.pdf
HM120N04DN-Channel Enhancement Mode Power MOSFET Description The HM120N04D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =120A RDS(ON)
9.7. Size:559K cn hmsemi
hm120n03k.pdf
N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =120A RDS(ON)
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