All MOSFET. HM1207E Datasheet

 

HM1207E MOSFET. Datasheet pdf. Equivalent


   Type Designator: HM1207E
   Marking Code: 0615'
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 70 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 0.1 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 15 Ohm
   Package: SOT23

 HM1207E Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HM1207E Datasheet (PDF)

 ..1. Size:897K  cn hmsemi
 hm1207e.pdf

HM1207E HM1207E

HM1207EUltrahigh Threshold Voltage Depletion-Mode Power MOSFET General Features ESD improved Capability BVDSX VGS(off),max IDSS,min Depletion Mode (Normally On) Proprietary Advanced Planar Technology 70V -20V 120mA Proprietary Advanced Ultrahigh Vth Technology RoHS Compliant Halogen-free available SOT-23DDrainApplications Source Quick

 9.1. Size:91K  chenmko
 chm1203evjgp.pdf

HM1207E HM1207E

CHENMKO ENTERPRISE CO.,LTDCHM1203EVJGPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 12 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. ( SO-8 )* Super high density cell design for extremely low RDS(ON). ( )4.06 0.160( )3.70 0.146* High p

 9.2. Size:977K  cn hmsemi
 hm120n04.pdf

HM1207E HM1207E

HM120N04N-Channel Enhancement Mode Power MOSFET Description The HM120N04 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =120A Schematic diagram RDS(ON)

 9.3. Size:594K  cn hmsemi
 hm120n03.pdf

HM1207E HM1207E

HM120N03N-Channel Enhancement Mode Power MOSFET Description The HM120N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =120A RDS(ON)

 9.4. Size:711K  cn hmsemi
 hm120n04k.pdf

HM1207E HM1207E

HM120N04KN-Channel Enhancement Mode Power MOSFET Description The HM120N04K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =120A RDS(ON)

 9.5. Size:526K  cn hmsemi
 hm120n04i.pdf

HM1207E HM1207E

Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =120A RDS(ON)

 9.6. Size:904K  cn hmsemi
 hm120n04d.pdf

HM1207E HM1207E

HM120N04DN-Channel Enhancement Mode Power MOSFET Description The HM120N04D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =120A RDS(ON)

 9.7. Size:559K  cn hmsemi
 hm120n03k.pdf

HM1207E HM1207E

N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =120A RDS(ON)

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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