HM1207E - Даташиты. Аналоги. Основные параметры

HM1207EUltrahigh Threshold Voltage Depletion-Mode Power MOSFET General Features ESD improved Capability BVDSX VGS(off),max IDSS,min Depletion Mode (Normally On) Proprietary Advanced Planar Technology 70V -20V 120mA Proprietary Advanced Ultrahigh Vth Technology RoHS Compliant Halogen-free available SOT-23DDrainApplications Source Quick

CHENMKO ENTERPRISE CO.,LTDCHM1203EVJGPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 12 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. ( SO-8 )* Super high density cell design for extremely low RDS(ON). ( )4.06 0.160( )3.70 0.146* High p

HM120N04N-Channel Enhancement Mode Power MOSFET Description The HM120N04 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =120A Schematic diagram RDS(ON)

HM120N03N-Channel Enhancement Mode Power MOSFET Description The HM120N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =120A RDS(ON)

HM120N04KN-Channel Enhancement Mode Power MOSFET Description The HM120N04K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =120A RDS(ON)

Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =120A RDS(ON)

HM120N04DN-Channel Enhancement Mode Power MOSFET Description The HM120N04D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =120A RDS(ON)

N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =120A RDS(ON)