2SK2522-01MR Specs and Replacement
Type Designator: 2SK2522-01MR
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 18 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 80 nS
Cossⓘ -
Output Capacitance: 220 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
Package: TO220F
2SK2522-01MR substitution
- MOSFET ⓘ Cross-Reference Search
2SK2522-01MR datasheet
..1. Size:162K 1
2sk2522-01mr.pdf 
N-channel MOS-FET 2SK2522-01MR FAP-II Series 200V 0,18 18A 40W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characteristics > Equ... See More ⇒
8.1. Size:162K 1
2sk2520-01mr.pdf
N-channel MOS-FET 2SK2520-01MR FAP-II Series 200V 0,4 10A 30W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characteristics > Equi... See More ⇒
8.4. Size:154K 1
2sk2521-01.pdf
N-channel MOS-FET 2SK2521-01 FAP-II Series 200V 0,18 18A 50W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characteristics > Equiv... See More ⇒
8.5. Size:160K 1
2sk2523-01.pdf
N-channel MOS-FET 2SK2523-01 FAP-II Series 450V 1 9A 60W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characteristics > Equivalen... See More ⇒
8.6. Size:89K renesas
2sk2529.pdf
2SK2529 Silicon N Channel MOS FET REJ03G1014-0800 (Previous ADE-208-356F) Rev.8.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance RDS(on) = 7 m typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code PRSS0003AE-A (Package name TO-220C FM) D G 1. Gate 2. Drai... See More ⇒
8.7. Size:149K fuji
2sk2528-01.pdf
N-channel MOS-FET 2SK2528-01 FAP-II Series 900V 3,6 5A 80W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characteristics > Equival... See More ⇒
8.8. Size:137K fuji
2sk2527-01mr.pdf
N-channel MOS-FET 2SK2527-01MR FAP-II Series 900V 3,6 5A 40W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characteristics > Equiv... See More ⇒
Detailed specifications: 2SK2511, 2SK2512, 2SK2513, 2SK2514, 2SK2515, 2SK2519-01, 2SK2520-01MR, 2SK2521-01, 20N60, 2SK2523-01, 2SK2524-01MR, 2SK2525-01, 2SK2529, 2SK2541, 2SK2553, 2SK2554, 2SK2586
Keywords - 2SK2522-01MR MOSFET specs
2SK2522-01MR cross reference
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
