2SK2522-01MR MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: 2SK2522-01MR
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 40 W
Предельно допустимое напряжение сток-исток |Uds|: 200 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Пороговое напряжение включения |Ugs(th)|: 3.5 V
Максимально допустимый постоянный ток стока |Id|: 18 A
Максимальная температура канала (Tj): 150 °C
Время нарастания (tr): 80 ns
Выходная емкость (Cd): 220 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.18 Ohm
Тип корпуса: TO220F
Аналог (замена) для 2SK2522-01MR
2SK2522-01MR Datasheet (PDF)
2sk2522-01mr.pdf
N-channel MOS-FET2SK2522-01MRFAP-II Series 200V 0,18 18A 40W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Avalanche Proof> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characteristics > Equ
2sk2520-01mr.pdf
N-channel MOS-FET2SK2520-01MRFAP-II Series 200V 0,4 10A 30W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Avalanche Proof> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characteristics > Equi
2sk2521-01.pdf
N-channel MOS-FET2SK2521-01FAP-II Series 200V 0,18 18A 50W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Avalanche Proof> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characteristics > Equiv
2sk2523-01.pdf
N-channel MOS-FET2SK2523-01FAP-II Series 450V 1 9A 60W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Avalanche Proof> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characteristics > Equivalen
2sk2529.pdf
2SK2529 Silicon N Channel MOS FET REJ03G1014-0800 (Previous: ADE-208-356F) Rev.8.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance RDS(on) = 7 m typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0003AE-A(Package name: TO-220CFM)DG 1. Gate2. Drai
2sk2528-01.pdf
N-channel MOS-FET2SK2528-01FAP-II Series 900V 3,6 5A 80W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Avalanche Proof> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characteristics > Equival
2sk2527-01mr.pdf
N-channel MOS-FET2SK2527-01MRFAP-II Series 900V 3,6 5A 40W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Avalanche Proof> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characteristics > Equiv
Другие MOSFET... 2SK2511 , 2SK2512 , 2SK2513 , 2SK2514 , 2SK2515 , 2SK2519-01 , 2SK2520-01MR , 2SK2521-01 , 20N60 , 2SK2523-01 , 2SK2524-01MR , 2SK2525-01 , 2SK2529 , 2SK2541 , 2SK2553 , 2SK2554 , 2SK2586 .
