HM13N50 Specs and Replacement
Type Designator: HM13N50
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 195 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 13 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 100 nS
Cossⓘ - Output Capacitance: 200 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.48 Ohm
Package: TO220
HM13N50 substitution
- MOSFET ⓘ Cross-Reference Search
HM13N50 datasheet
hm13n50 hm13n50f.pdf
HM13N50 / HM13N50F HM13N50 / HM13N50F 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using SL semi s 13.0A, 500V, RDS(on) = 0.48 @VGS = 10 V advanced planar stripe DMOS technology. Low gate charge ( typical 45nC) This advanced technology has been espe cially tailored to Fast witching s minimize o n-state r esistance, pr ovide superior ... See More ⇒
chm13n07pagp.pdf
CHENMKO ENTERPRISE CO.,LTD CHM13N07PAGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 70 Volts CURRENT 11 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D-PAK(TO-252) FEATURE * Small package. (TO-252) * Super high dense cell design for extremely low RDS(ON). .094 (2.40) .280 (7.10) * High power... See More ⇒
Detailed specifications: HM120N04I, HM120N04K, HM12N15I, HM12N20D, HM12N60, HM12N60F, HM12N65, HM12N65F, IRLZ44N, HM13N50F, HM13P10, HM13P10K, HM1404, HM1404B, HM1404C, HM1404D, HM150N03
Keywords - HM13N50 MOSFET specs
HM13N50 cross reference
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HM13N50 substitution
HM13N50 replacement
Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: MNT-LB32N20 | IRFU3607PBF
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