All MOSFET. HM13N50 Datasheet

 

HM13N50 Datasheet and Replacement


   Type Designator: HM13N50
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 195 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 13 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 100 nS
   Cossⓘ - Output Capacitance: 200 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.48 Ohm
   Package: TO220
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HM13N50 Datasheet (PDF)

 ..1. Size:349K  cn hmsemi
 hm13n50 hm13n50f.pdf pdf_icon

HM13N50

HM13N50 / HM13N50FHM13N50 / HM13N50F500V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using SL semis 13.0A, 500V, RDS(on) = 0.48 @VGS = 10 Vadvanced planar stripe DMOS technology. Low gate charge ( typical 45nC)This advanced technology has been espe cially tailored to Fast witchingsminimize o n-state r esistance, pr ovide superior

 9.1. Size:47K  chenmko
 chm13n07pagp.pdf pdf_icon

HM13N50

CHENMKO ENTERPRISE CO.,LTDCHM13N07PAGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 70 Volts CURRENT 11 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D-PAK(TO-252)FEATURE* Small package. (TO-252)* Super high dense cell design for extremely low RDS(ON). .094 (2.40).280 (7.10)* High power

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: APM4303K | TSM4424CS | LKK47-06C5 | SFP085N75C2 | IPA028N08N3G | BRCS200P03DP | IRFB3004GPBF

Keywords - HM13N50 MOSFET datasheet

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