HM15P55K Datasheet and Replacement
Type Designator: HM15P55K
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 15 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 145 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm
Package: TO252
HM15P55K substitution
HM15P55K Datasheet (PDF)
hm15p55k.pdf

P-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-55V,ID =-15A RDS(ON)
hm15p10d.pdf

P-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =- A RDS(ON)
Datasheet: HM150N03D , HM150N03K , HM15N02Q , HM15N10D , HM15N10K , HM15N50 , HM15N50F , HM15P10D , 2N7000 , HM1607 , HM1607D , HM16N02D , HM16N50 , HM16N50F , HM16N60F , HM16N65F , HM16P12D .
History: DMTH3004LK3 | 30N06L-TA3-T | PSMN2R0-40YLD | STD5N95K5 | LSGC04R029 | 2SJ605 | PHD16N03T
Keywords - HM15P55K MOSFET datasheet
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History: DMTH3004LK3 | 30N06L-TA3-T | PSMN2R0-40YLD | STD5N95K5 | LSGC04R029 | 2SJ605 | PHD16N03T



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