All MOSFET. HM15P55K Datasheet

 

HM15P55K Datasheet and Replacement


   Type Designator: HM15P55K
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 15 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 145 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm
   Package: TO252
 

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HM15P55K Datasheet (PDF)

 ..1. Size:646K  cn hmsemi
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HM15P55K

P-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-55V,ID =-15A RDS(ON)

 9.1. Size:722K  cn hmsemi
 hm15p10d.pdf pdf_icon

HM15P55K

P-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =- A RDS(ON)

Datasheet: HM150N03D , HM150N03K , HM15N02Q , HM15N10D , HM15N10K , HM15N50 , HM15N50F , HM15P10D , 2N7000 , HM1607 , HM1607D , HM16N02D , HM16N50 , HM16N50F , HM16N60F , HM16N65F , HM16P12D .

History: DMTH3004LK3 | 30N06L-TA3-T | PSMN2R0-40YLD | STD5N95K5 | LSGC04R029 | 2SJ605 | PHD16N03T

Keywords - HM15P55K MOSFET datasheet

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