All MOSFET. FDMA510PZ Datasheet

 

FDMA510PZ Datasheet and Replacement


   Type Designator: FDMA510PZ
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
   |Id| ⓘ - Maximum Drain Current: 7.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 19 nC
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
   Package: MICROFET
 

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FDMA510PZ Datasheet (PDF)

 ..1. Size:306K  fairchild semi
 fdma510pz.pdf pdf_icon

FDMA510PZ

April 2009FDMA510PZtmSingle P-Channel PowerTrench MOSFET 20V, 7.8A, 30mFeatures General Description Max rDS(on) = 30m at VGS = 4.5V, ID = 7.8AThis device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications. Max rDS(on) = 37m at VGS = 2.5V, ID = 6.6AIt features a MOSFET with low o

 ..2. Size:378K  onsemi
 fdma510pz.pdf pdf_icon

FDMA510PZ

FDMA510PZSingle P-Channel PowerTrench MOSFET 20V, 7.8A, 30mGeneral DescriptionFeaturesThis device is designed specifically for battery charge or load Max rDS(on) = 30m at VGS = 4.5V, ID = 7.8Aswitching in cellular handset and other ultraportable applications. Max rDS(on) = 37m at VGS = 2.5V, ID = 6.6AIt features a MOSFET with low on-state resista

 9.1. Size:283K  fairchild semi
 fdma520pz.pdf pdf_icon

FDMA510PZ

April 2009FDMA520PZtmSingle P-Channel PowerTrench MOSFET 20V, 7.3A, 30mFeatures General Description Max rDS(on) = 30m at VGS = 4.5V, ID = 7.3AThis device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications. Max rDS(on) = 53m at VGS = 2.5V, ID = 5.5AIt features a MOSFET with low o

 9.2. Size:302K  fairchild semi
 fdma507pz.pdf pdf_icon

FDMA510PZ

May 2010FDMA507PZSingle P-Channel PowerTrench MOSFET-20 V, -7.8 A, 24 mFeatures General DescriptionThis device is designed specifically for battery charge or load Max rDS(on) = 24 m at VGS = -5 V, ID = -7.8 Aswitching in cellular handset and other ultraportable applications. Max rDS(on) = 25 m at VGS = -4.5 V, ID = -7 AIt features a MOSFET with low on-stade resist

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