FDMA510PZ
MOSFET. Datasheet pdf. Equivalent
Type Designator: FDMA510PZ
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 2.4
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5
V
|Id|ⓘ - Maximum Drain Current: 7.8
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 19
nC
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.03
Ohm
Package: MICROFET
FDMA510PZ
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FDMA510PZ
Datasheet (PDF)
..1. Size:306K fairchild semi
fdma510pz.pdf
April 2009FDMA510PZtmSingle P-Channel PowerTrench MOSFET 20V, 7.8A, 30mFeatures General Description Max rDS(on) = 30m at VGS = 4.5V, ID = 7.8AThis device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications. Max rDS(on) = 37m at VGS = 2.5V, ID = 6.6AIt features a MOSFET with low o
..2. Size:378K onsemi
fdma510pz.pdf
FDMA510PZSingle P-Channel PowerTrench MOSFET 20V, 7.8A, 30mGeneral DescriptionFeaturesThis device is designed specifically for battery charge or load Max rDS(on) = 30m at VGS = 4.5V, ID = 7.8Aswitching in cellular handset and other ultraportable applications. Max rDS(on) = 37m at VGS = 2.5V, ID = 6.6AIt features a MOSFET with low on-state resista
9.1. Size:283K fairchild semi
fdma520pz.pdf
April 2009FDMA520PZtmSingle P-Channel PowerTrench MOSFET 20V, 7.3A, 30mFeatures General Description Max rDS(on) = 30m at VGS = 4.5V, ID = 7.3AThis device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications. Max rDS(on) = 53m at VGS = 2.5V, ID = 5.5AIt features a MOSFET with low o
9.2. Size:302K fairchild semi
fdma507pz.pdf
May 2010FDMA507PZSingle P-Channel PowerTrench MOSFET-20 V, -7.8 A, 24 mFeatures General DescriptionThis device is designed specifically for battery charge or load Max rDS(on) = 24 m at VGS = -5 V, ID = -7.8 Aswitching in cellular handset and other ultraportable applications. Max rDS(on) = 25 m at VGS = -4.5 V, ID = -7 AIt features a MOSFET with low on-stade resist
9.3. Size:787K fairchild semi
fdma530pz.pdf
June 2011tmFDMA530PZSingle P-Channel PowerTrench MOSFET 30V, 6.8A, 35mFeatures General Description Max rDS(on) = 35m at VGS = 10V, ID = 6.8AThis device is designed specifically for battery charge or load switching in cellular handset and other ultraportable Max rDS(on) = 65m at VGS = 4.5V, ID = 5.0Aapplications . It features a MOSFET with low on-st
9.4. Size:314K onsemi
fdma530pz.pdf
MOSFET - Power, SingleP-Channel, POWERTRENCH)-30 V, -6.8 A, 35 mWFDMA530PZGeneral DescriptionThis device is designed specifically for battery charge or loadwww.onsemi.comswitching in cellular handset and other ultraportable applications . Itfeatures a MOSFET with low on-state resistance.The WDFN6 (MicroFET 2 2) package offers exceptional thermalBottom Drain Contactperfo
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