FDMA510PZ datasheet, аналоги, основные параметры

Наименование производителя: FDMA510PZ  📄📄 

Тип транзистора: MOSFET

Полярность: P

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 2.4 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 20 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 8 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 7.8 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.03 Ohm

Тип корпуса: MICROFET

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Аналог (замена) для FDMA510PZ

- подборⓘ MOSFET транзистора по параметрам

 

FDMA510PZ даташит

 ..1. Size:306K  fairchild semi
 fdma510pz.pdf pdf_icon

FDMA510PZ

April 2009 FDMA510PZ tm Single P-Channel PowerTrench MOSFET 20V, 7.8A, 30m Features General Description Max rDS(on) = 30m at VGS = 4.5V, ID = 7.8A This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications. Max rDS(on) = 37m at VGS = 2.5V, ID = 6.6A It features a MOSFET with low o

 ..2. Size:378K  onsemi
 fdma510pz.pdf pdf_icon

FDMA510PZ

FDMA510PZ Single P-Channel PowerTrench MOSFET 20V, 7.8A, 30m General Description Features This device is designed specifically for battery charge or load Max rDS(on) = 30m at VGS = 4.5V, ID = 7.8A switching in cellular handset and other ultraportable applications. Max rDS(on) = 37m at VGS = 2.5V, ID = 6.6A It features a MOSFET with low on-state resista

 9.1. Size:283K  fairchild semi
 fdma520pz.pdf pdf_icon

FDMA510PZ

April 2009 FDMA520PZ tm Single P-Channel PowerTrench MOSFET 20V, 7.3A, 30m Features General Description Max rDS(on) = 30m at VGS = 4.5V, ID = 7.3A This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications. Max rDS(on) = 53m at VGS = 2.5V, ID = 5.5A It features a MOSFET with low o

 9.2. Size:302K  fairchild semi
 fdma507pz.pdf pdf_icon

FDMA510PZ

May 2010 FDMA507PZ Single P-Channel PowerTrench MOSFET -20 V, -7.8 A, 24 m Features General Description This device is designed specifically for battery charge or load Max rDS(on) = 24 m at VGS = -5 V, ID = -7.8 A switching in cellular handset and other ultraportable applications. Max rDS(on) = 25 m at VGS = -4.5 V, ID = -7 A It features a MOSFET with low on-stade resist

ПОКАЗАТЬ ЕЩЁ

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