All MOSFET. HM16N50F Datasheet

 

HM16N50F MOSFET. Datasheet pdf. Equivalent


   Type Designator: HM16N50F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 41 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 16 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 52 nC
   trⓘ - Rise Time: 36.5 nS
   Cossⓘ - Output Capacitance: 255 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.366 Ohm
   Package: TO220F

 HM16N50F Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HM16N50F Datasheet (PDF)

 ..1. Size:2457K  cn hmsemi
 hm16n50 hm16n50f.pdf

HM16N50F HM16N50F

HM16N50 / HM16N50F500V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 16A, 500V, RDS(on)typ. = 305m@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 52nC)This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switching - Fast switchingp

 9.1. Size:989K  cn hmsemi
 hm16n02d.pdf

HM16N50F HM16N50F

HM16N02D20V N-Channel Enhancement Mode MOSFETDescription Schematic diagram The HM16N02D uses advanced trench technology to Dprovide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This Gdevice is suitable for use as a load switch or in PWM applications. General Features S VDS =20VID =16A Marking and pin assignment RDS(ON)(T

 9.2. Size:827K  cn hmsemi
 hm16n60f.pdf

HM16N50F HM16N50F

VDSS 600 V General Description ID 16 A HM16N60F, the silicon N-channel Enhanced PD(TC=25) 70 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.41 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturizati

 9.3. Size:1129K  cn hmsemi
 hm16n65f.pdf

HM16N50F HM16N50F

HM16N65FVDSS 650 V General Description ID 16 A HM16N65F, the silicon N-channel Enhanced PD(TC=25) 70 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.51 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturizati

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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