HM16N50F MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: HM16N50F
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 41 W
Предельно допустимое напряжение сток-исток |Uds|: 500 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 16 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 52 nC
Время нарастания (tr): 36.5 ns
Выходная емкость (Cd): 255 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.366 Ohm
Тип корпуса: TO220F
HM16N50F Datasheet (PDF)
hm16n50 hm16n50f.pdf
HM16N50 / HM16N50F500V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 16A, 500V, RDS(on)typ. = 305m@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 52nC)This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switching - Fast switchingp
hm16n02d.pdf
HM16N02D20V N-Channel Enhancement Mode MOSFETDescription Schematic diagram The HM16N02D uses advanced trench technology to Dprovide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This Gdevice is suitable for use as a load switch or in PWM applications. General Features S VDS =20VID =16A Marking and pin assignment RDS(ON)(T
hm16n60f.pdf
VDSS 600 V General Description ID 16 A HM16N60F, the silicon N-channel Enhanced PD(TC=25) 70 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.41 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturizati
hm16n65f.pdf
HM16N65FVDSS 650 V General Description ID 16 A HM16N65F, the silicon N-channel Enhanced PD(TC=25) 70 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.51 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturizati
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: FCPF290N80 | STD4NK60ZT4
