All MOSFET. HM16P12D Datasheet

 

HM16P12D Datasheet and Replacement


   Type Designator: HM16P12D
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 18 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 16 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 680 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
   Package: DFN2X2
 

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HM16P12D Datasheet (PDF)

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HM16P12D

HM16P12D P-Channel Enhancement Mode Power MOSFET Description DThe HM16P12D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages .This device is suitable for use as a load switching application and a wide variety of other applications. SGeneral Features Schematic diagram VDS = -12V,ID = -16A RDS(ON)

Datasheet: HM15P55K , HM1607 , HM1607D , HM16N02D , HM16N50 , HM16N50F , HM16N60F , HM16N65F , SPP20N60C3 , HM17N10K , HM180N02 , HM180N02D , HM180N02K , HM18DN03Q , HM18N03D , HM18N40 , HM18N40A .

History: FTK2N65P

Keywords - HM16P12D MOSFET datasheet

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