All MOSFET. HM17N10K Datasheet

 

HM17N10K Datasheet and Replacement


   Type Designator: HM17N10K
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 55 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 17 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 9.3 nS
   Cossⓘ - Output Capacitance: 240 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
   Package: TO252
 

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HM17N10K Datasheet (PDF)

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HM17N10K

N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =17A RDS(ON)

Datasheet: HM1607 , HM1607D , HM16N02D , HM16N50 , HM16N50F , HM16N60F , HM16N65F , HM16P12D , 8205A , HM180N02 , HM180N02D , HM180N02K , HM18DN03Q , HM18N03D , HM18N40 , HM18N40A , HM18N40F .

History: 2SJ363 | APT4018BN | UTT18P06 | AP8N3R5CMT | GP2M004A065XG

Keywords - HM17N10K MOSFET datasheet

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