HM17N10K Specs and Replacement
Type Designator: HM17N10K
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 55 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 17 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 9.3 nS
Cossⓘ - Output Capacitance: 240 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
Package: TO252
HM17N10K substitution
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HM17N10K datasheet
hm17n10k.pdf
N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =17A RDS(ON) ... See More ⇒
Detailed specifications: HM1607, HM1607D, HM16N02D, HM16N50, HM16N50F, HM16N60F, HM16N65F, HM16P12D, IRFP260, HM180N02, HM180N02D, HM180N02K, HM18DN03Q, HM18N03D, HM18N40, HM18N40A, HM18N40F
Keywords - HM17N10K MOSFET specs
HM17N10K cross reference
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History: 2SK3092D | SDF054
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