All MOSFET. FDMA520PZ Datasheet

 

FDMA520PZ MOSFET. Datasheet pdf. Equivalent


   Type Designator: FDMA520PZ
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 2.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
   |Id|ⓘ - Maximum Drain Current: 7.3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 14 nC
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
   Package: MICROFET

 FDMA520PZ Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDMA520PZ Datasheet (PDF)

 ..1. Size:283K  fairchild semi
 fdma520pz.pdf

FDMA520PZ FDMA520PZ

April 2009FDMA520PZtmSingle P-Channel PowerTrench MOSFET 20V, 7.3A, 30mFeatures General Description Max rDS(on) = 30m at VGS = 4.5V, ID = 7.3AThis device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications. Max rDS(on) = 53m at VGS = 2.5V, ID = 5.5AIt features a MOSFET with low o

 9.1. Size:302K  fairchild semi
 fdma507pz.pdf

FDMA520PZ FDMA520PZ

May 2010FDMA507PZSingle P-Channel PowerTrench MOSFET-20 V, -7.8 A, 24 mFeatures General DescriptionThis device is designed specifically for battery charge or load Max rDS(on) = 24 m at VGS = -5 V, ID = -7.8 Aswitching in cellular handset and other ultraportable applications. Max rDS(on) = 25 m at VGS = -4.5 V, ID = -7 AIt features a MOSFET with low on-stade resist

 9.2. Size:787K  fairchild semi
 fdma530pz.pdf

FDMA520PZ FDMA520PZ

June 2011tmFDMA530PZSingle P-Channel PowerTrench MOSFET 30V, 6.8A, 35mFeatures General Description Max rDS(on) = 35m at VGS = 10V, ID = 6.8AThis device is designed specifically for battery charge or load switching in cellular handset and other ultraportable Max rDS(on) = 65m at VGS = 4.5V, ID = 5.0Aapplications . It features a MOSFET with low on-st

 9.3. Size:306K  fairchild semi
 fdma510pz.pdf

FDMA520PZ FDMA520PZ

April 2009FDMA510PZtmSingle P-Channel PowerTrench MOSFET 20V, 7.8A, 30mFeatures General Description Max rDS(on) = 30m at VGS = 4.5V, ID = 7.8AThis device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications. Max rDS(on) = 37m at VGS = 2.5V, ID = 6.6AIt features a MOSFET with low o

 9.4. Size:314K  onsemi
 fdma530pz.pdf

FDMA520PZ FDMA520PZ

MOSFET - Power, SingleP-Channel, POWERTRENCH)-30 V, -6.8 A, 35 mWFDMA530PZGeneral DescriptionThis device is designed specifically for battery charge or loadwww.onsemi.comswitching in cellular handset and other ultraportable applications . Itfeatures a MOSFET with low on-state resistance.The WDFN6 (MicroFET 2 2) package offers exceptional thermalBottom Drain Contactperfo

 9.5. Size:378K  onsemi
 fdma510pz.pdf

FDMA520PZ FDMA520PZ

FDMA510PZSingle P-Channel PowerTrench MOSFET 20V, 7.8A, 30mGeneral DescriptionFeaturesThis device is designed specifically for battery charge or load Max rDS(on) = 30m at VGS = 4.5V, ID = 7.8Aswitching in cellular handset and other ultraportable applications. Max rDS(on) = 37m at VGS = 2.5V, ID = 6.6AIt features a MOSFET with low on-state resista

Datasheet: FDMA3028N , STS3401A , FDMA410NZ , FDMA420NZ , FDMA430NZ , STS3401 , FDMA507PZ , FDMA510PZ , 5N60 , FDMA530PZ , FDMA6023PZT , FDMA7630 , STS3400 , FDMA7632 , STS3116E , FDMA7670 , STS2622A .

 

 
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