FDMA520PZ datasheet, аналоги, основные параметры
Наименование производителя: FDMA520PZ 📄📄
Тип транзистора: MOSFET
Полярность: P
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 2.4 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 20 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 12 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 7.3 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.03 Ohm
Тип корпуса: MICROFET
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Аналог (замена) для FDMA520PZ
- подборⓘ MOSFET транзистора по параметрам
FDMA520PZ даташит
fdma520pz.pdf
April 2009 FDMA520PZ tm Single P-Channel PowerTrench MOSFET 20V, 7.3A, 30m Features General Description Max rDS(on) = 30m at VGS = 4.5V, ID = 7.3A This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications. Max rDS(on) = 53m at VGS = 2.5V, ID = 5.5A It features a MOSFET with low o
fdma507pz.pdf
May 2010 FDMA507PZ Single P-Channel PowerTrench MOSFET -20 V, -7.8 A, 24 m Features General Description This device is designed specifically for battery charge or load Max rDS(on) = 24 m at VGS = -5 V, ID = -7.8 A switching in cellular handset and other ultraportable applications. Max rDS(on) = 25 m at VGS = -4.5 V, ID = -7 A It features a MOSFET with low on-stade resist
fdma530pz.pdf
June 2011 tm FDMA530PZ Single P-Channel PowerTrench MOSFET 30V, 6.8A, 35m Features General Description Max rDS(on) = 35m at VGS = 10V, ID = 6.8A This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable Max rDS(on) = 65m at VGS = 4.5V, ID = 5.0A applications . It features a MOSFET with low on-st
fdma510pz.pdf
April 2009 FDMA510PZ tm Single P-Channel PowerTrench MOSFET 20V, 7.8A, 30m Features General Description Max rDS(on) = 30m at VGS = 4.5V, ID = 7.8A This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications. Max rDS(on) = 37m at VGS = 2.5V, ID = 6.6A It features a MOSFET with low o
Другие IGBT... FDMA3028N, STS3401A, FDMA410NZ, FDMA420NZ, FDMA430NZ, STS3401, FDMA507PZ, FDMA510PZ, AON6380, FDMA530PZ, FDMA6023PZT, FDMA7630, STS3400, FDMA7632, STS3116E, FDMA7670, STS2622A
Параметры MOSFET. Взаимосвязь и компромиссы
History: FDMA430NZ
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