HM180N02K Datasheet and Replacement
Type Designator: HM180N02K
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 130 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id|ⓘ - Maximum Drain Current: 185 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 1200 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.002 Ohm
Package: TO252
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HM180N02K Datasheet (PDF)
hm180n02k.pdf

HM180N02KN-Channel Enhancement Mode Power MOSFET Description The HM180N02K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =185A RDS(ON)
hm180n02d.pdf

HM180N02DN-Channel Enhancement Mode Power MOSFET Description The HM180N02D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =185A RDS(ON)
hm180n02.pdf

HM180N02N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =185A RDS(ON)
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: SW226N | UT8205A | PSMN8R5-100ES | NDD04N60Z-1G | AON6982 | SQ3427AEEV | WML11N80M3
Keywords - HM180N02K MOSFET datasheet
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History: SW226N | UT8205A | PSMN8R5-100ES | NDD04N60Z-1G | AON6982 | SQ3427AEEV | WML11N80M3



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