All MOSFET. HM180N02K Datasheet

 

HM180N02K Datasheet and Replacement


   Type Designator: HM180N02K
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 130 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 185 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 1200 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.002 Ohm
   Package: TO252
 
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HM180N02K Datasheet (PDF)

 ..1. Size:991K  cn hmsemi
 hm180n02k.pdf pdf_icon

HM180N02K

HM180N02KN-Channel Enhancement Mode Power MOSFET Description The HM180N02K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =185A RDS(ON)

 6.1. Size:803K  cn hmsemi
 hm180n02d.pdf pdf_icon

HM180N02K

HM180N02DN-Channel Enhancement Mode Power MOSFET Description The HM180N02D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =185A RDS(ON)

 6.2. Size:601K  cn hmsemi
 hm180n02.pdf pdf_icon

HM180N02K

HM180N02N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =185A RDS(ON)

Datasheet: HM16N50 , HM16N50F , HM16N60F , HM16N65F , HM16P12D , HM17N10K , HM180N02 , HM180N02D , IRF9540N , HM18DN03Q , HM18N03D , HM18N40 , HM18N40A , HM18N40F , HM18N50A , HM18N50F , HM18P10 .

History: SSZ65R022SFD3 | 2SK118

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