All MOSFET. HM18P10K Datasheet

 

HM18P10K Datasheet and Replacement


   Type Designator: HM18P10K
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 70 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 18 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 73 nS
   Cossⓘ - Output Capacitance: 590 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: TO220
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HM18P10K Datasheet (PDF)

 ..1. Size:460K  cn hmsemi
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HM18P10K

8 K P-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-18A Schematic diagram RDS(ON)

 7.1. Size:514K  cn hmsemi
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HM18P10K

HM18P10P-Channel Enhancement Mode Power MOSFET Description The HM18P10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-18A Schematic diagram RDS(ON)

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: RJK0331DPB-00

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