HM18P10K MOSFET Datasheet: P-Ch, 100V, 18A. Full specification with pinout and replacement list

HM18P10K Specs and Replacement

Type Designator: HM18P10K

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 70 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 73 nS

Cossⓘ - Output Capacitance: 590 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm

Package: TO220

HM18P10K substitution

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HM18P10K datasheet

..1. Size:460K cn hmsemi
hm18p10k.pdf pdf_icon

8 K P-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-18A Schematic diagram RDS(ON) ... See More ⇒

7.1. Size:514K cn hmsemi
hm18p10.pdf pdf_icon

HM18P10 P-Channel Enhancement Mode Power MOSFET Description The HM18P10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-18A Schematic diagram RDS(ON) ... See More ⇒

Detailed specifications: HM18DN03Q, HM18N03D, HM18N40, HM18N40A, HM18N40F, HM18N50A, HM18N50F, HM18P10, IRF530, HM19N40, HM1N50MR, HM1N60, HM1N60PR, HM1N60R, HM1P10MR, HM1P15MR, HM1P15PR