HM1N60 MOSFET Datasheet: N-Ch, 600V, 0.5A. Full specification with pinout and replacement list

HM1N60 Specs and Replacement

Type Designator: HM1N60

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 0.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 46 nS

Cossⓘ - Output Capacitance: 19 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 15 Ohm

Package: TO92

HM1N60 substitution

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HM1N60 datasheet

..1. Size:727K cn hmsemi
hm1n60.pdf pdf_icon

N N-CHANNEL MOSFET MAIN CHARACTERISTICS Package 0.5 A TO-92 ID 1.0 A IPAK/DPKA VDSS 600 V Rdson Vgs=10V 15 Qg 6.1 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts based on half bridge FEATU... See More ⇒

0.1. Size:741K cn hmsemi
hm1n60r.pdf pdf_icon

Silicon N-Channel Power MOSFET HM1N60R General Description VDSS 600 V HM1N60R, the silicon N-channel Enhanced ID 1.0 A PD (TC=25 ) 3 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 9 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit fo... See More ⇒

0.2. Size:1252K cn hmsemi
hm1n60pr.pdf pdf_icon

Silicon N-Channel Power MOSFET HM1N60 General Description VDSS 600 V HM1N60PR, the silicon N-channel Enhanced ID 1.0 A PD (TC=25 ) 3 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 9 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circu... See More ⇒

Detailed specifications: HM18N40A, HM18N40F, HM18N50A, HM18N50F, HM18P10, HM18P10K, HM19N40, HM1N50MR, AON7506, HM1N60PR, HM1N60R, HM1P10MR, HM1P15MR, HM1P15PR, HM2015DN03Q, HM2030Q, HM20N06