HM1N60 Datasheet and Replacement
Type Designator: HM1N60
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 0.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 6.1 nC
tr ⓘ - Rise Time: 46 nS
Cossⓘ - Output Capacitance: 19 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 15 Ohm
Package: TO92
HM1N60 substitution
HM1N60 Datasheet (PDF)
hm1n60.pdf

N N-CHANNEL MOSFET MAIN CHARACTERISTICS Package 0.5 A TO-92 ID 1.0 A IPAK/DPKAVDSS 600 V RdsonVgs=10V 15 Qg 6.1 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballastsbased on half bridge FEATU
hm1n60r.pdf

Silicon N-Channel Power MOSFET HM1N60RGeneral Description VDSS 600 VHM1N60R, the silicon N-channel EnhancedID 1.0 APD (TC=25) 3 WVDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 9 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit fo
hm1n60pr.pdf

Silicon N-Channel Power MOSFET HM1N60 General Description VDSS 600 VHM1N60PR, the silicon N-channel EnhancedID 1.0 APD (TC=25) 3 WVDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 9 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circu
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRF530 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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