All MOSFET. HM1P15MR Datasheet

 

HM1P15MR Datasheet and Replacement


   Type Designator: HM1P15MR
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 32 nS
   Cossⓘ - Output Capacitance: 48 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm
   Package: SOT23
 

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HM1P15MR Datasheet (PDF)

 ..1. Size:463K  cn hmsemi
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HM1P15MR

HM1P15MR Power MOSFET Datasheet P-Channel Enhancement Mode MOSFET FEATURES APPLICATIONS Battery Charge RDSON

 8.1. Size:370K  cn hmsemi
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HM1P15MR

HM1P15PR Power MOSFET Datasheet P-Channel Enhancement Mode MOSFET FEATURES APPLICATIONS Battery Charge RDSON

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HM1P15MR

HM1P10MR-100V P-Channel Enhancement Mode MOSFET Description The HM1P10MR uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -100V I =-0.9 A DS DR

Datasheet: HM18P10 , HM18P10K , HM19N40 , HM1N50MR , HM1N60 , HM1N60PR , HM1N60R , HM1P10MR , P60NF06 , HM1P15PR , HM2015DN03Q , HM2030Q , HM20N06 , HM20N06IA , HM20N06KA , HM20N15 , HM20N15A .

History: IPB80N06S2L-11 | SI8410DB | AP30T10GK

Keywords - HM1P15MR MOSFET datasheet

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