HM20N15 MOSFET Datasheet: N-Ch, 150V, 20A. Full specification with pinout and replacement list

HM20N15 Specs and Replacement

Type Designator: HM20N15

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5.5 nS

Cossⓘ - Output Capacitance: 290 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm

Package: TO220

HM20N15 substitution

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HM20N15 datasheet

..1. Size:394K cn hmsemi
hm20n15.pdf pdf_icon

HM20N15 NCE N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 150V,ID =20A RDS(ON) ... See More ⇒

0.1. Size:830K cn hmsemi
hm20n15a.pdf pdf_icon

HM20N15A N-Channel Enhancement Mode Power MOSFET Description The HM20N15A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 150V,ID =20A Schematic diagram RDS(ON) ... See More ⇒

0.2. Size:620K cn hmsemi
hm20n15ka.pdf pdf_icon

HM20N15KA N-Channel Enhancement Mode Power MOSFET Description The HM20N15KA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 150V,ID =20A Schematic diagram RDS(ON) ... See More ⇒

0.3. Size:877K cn hmsemi
hm20n15d.pdf pdf_icon

HM20N15D N-Channel Enhancement Mode Power MOSFET Description The HM20N15D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =150V,ID =20A RDS(ON) ... See More ⇒