HM20N15 - параметры транзистора MOSFET, его аналоги, datasheet

HM20N15 Datasheet (PDF)

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HM20N15NCE N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 150V,ID =20A RDS(ON)

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hm20n15a.pdf pdf_icon

HM20N15AN-Channel Enhancement Mode Power MOSFET Description The HM20N15A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 150V,ID =20A Schematic diagram RDS(ON)

0.2. Size:620K cn hmsemi
hm20n15ka.pdf pdf_icon

HM20N15KAN-Channel Enhancement Mode Power MOSFET Description The HM20N15KA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 150V,ID =20A Schematic diagram RDS(ON)

0.3. Size:877K cn hmsemi
hm20n15d.pdf pdf_icon

HM20N15DN-Channel Enhancement Mode Power MOSFET Description The HM20N15D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =150V,ID =20A RDS(ON)