All MOSFET. HM2300B Datasheet

 

HM2300B MOSFET. Datasheet pdf. Equivalent


   Type Designator: HM2300B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2 V
   |Id|ⓘ - Maximum Drain Current: 4.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 10 nC
   trⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 300 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
   Package: SOT23

 HM2300B Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HM2300B Datasheet (PDF)

 ..1. Size:567K  cn hmsemi
 hm2300b.pdf

HM2300B HM2300B

HM2300BN-Channel Enhancement Mode Power MOSFET Description DThe HM2300B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. SSchematic diagram General Features VDS = 20V,ID = 4.5A RDS(ON)

 8.1. Size:1890K  cn vbsemi
 hm2300.pdf

HM2300B HM2300B

HM2300www.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/DC Convert

 8.2. Size:644K  cn hmsemi
 hm2300d.pdf

HM2300B HM2300B

HM2300DN-Channel Enhancement Mode Power MOSFET Description DThe HM2300D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. SSchematic diagram General Features VDS = 20V,ID = 6.0A RDS(ON)

 8.3. Size:1067K  cn hmsemi
 hm2300pr.pdf

HM2300B HM2300B

HM2300PRN-Channel Enhancement Mode Power MOSFET Description DThe HM2300PR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. SGeneral Features Schematic diagram VDS = 20V,ID = 5.5A RDS(ON)

 8.4. Size:678K  cn hmsemi
 hm2300c.pdf

HM2300B HM2300B

HM2300CN-Channel Enhancement Mode Power MOSFET Description DThe HM2300C uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. SSchematic diagram General Features VDS = 20V,ID = 6.0A RDS(ON)

 8.5. Size:977K  cn hmsemi
 hm2300dr.pdf

HM2300B HM2300B

HM2300DRN-Channel Enhancement Mode Power MOSFET Description The HM2300DR uses advanced trench technology to provide Dexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Gbattery protection or in other switching application. SGeneral Features VDS = 20V,ID = 8.0A Schematic diagram RDS(ON)

 8.6. Size:553K  cn hmsemi
 hm2300.pdf

HM2300B HM2300B

HM2300N-Channel Enhancement Mode Power MOSFET Description DThe HM2300 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. SSchematic diagram General Features VDS = 20V,ID = 4.5A RDS(ON)

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: SISS27DN | SI7106DN | VBMB15R13 | RUH6080M3-C | FQB12P20

 

 
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