HM2300B PDF and Equivalents Search

 

HM2300B Specs and Replacement

Type Designator: HM2300B

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 4.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 300 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm

Package: SOT23

HM2300B substitution

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HM2300B datasheet

 ..1. Size:567K  cn hmsemi
 hm2300b.pdf pdf_icon

HM2300B

HM2300B N-Channel Enhancement Mode Power MOSFET Description D The HM2300B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. S Schematic diagram General Features VDS = 20V,ID = 4.5A RDS(ON) ... See More ⇒

 8.1. Size:1890K  cn vbsemi
 hm2300.pdf pdf_icon

HM2300B

HM2300 www.VBsemi.tw N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)e Qg (Typ.) Definition 0.028 at VGS = 4.5 V TrenchFET Power MOSFET 6a 100 % Rg Tested 20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC 0.050 at VGS = 1.8 V 5.6 APPLICATIONS DC/DC Convert... See More ⇒

 8.2. Size:644K  cn hmsemi
 hm2300d.pdf pdf_icon

HM2300B

HM2300D N-Channel Enhancement Mode Power MOSFET Description D The HM2300D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. S Schematic diagram General Features VDS = 20V,ID = 6.0A RDS(ON) ... See More ⇒

 8.3. Size:1067K  cn hmsemi
 hm2300pr.pdf pdf_icon

HM2300B

HM2300PR N-Channel Enhancement Mode Power MOSFET Description D The HM2300PR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. S General Features Schematic diagram VDS = 20V,ID = 5.5A RDS(ON) ... See More ⇒

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Detailed specifications: HM20N50F, HM20N60, HM20N60A, HM20N60F, HM20N65F, HM20P02D, HM20P02Q, HM20PD05, AO3400A, HM2300C, HM2300D, HM2300DR, HM2300PR, HM2301, HM2301A, HM2301B, HM2301BJR

Keywords - HM2300B MOSFET specs

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