HM2300B - описание и поиск аналогов

HM2300B N-Channel Enhancement Mode Power MOSFET Description D The HM2300B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. S Schematic diagram General Features VDS = 20V,ID = 4.5A RDS(ON)

HM2300 www.VBsemi.tw N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)e Qg (Typ.) Definition 0.028 at VGS = 4.5 V TrenchFET Power MOSFET 6a 100 % Rg Tested 20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC 0.050 at VGS = 1.8 V 5.6 APPLICATIONS DC/DC Convert

HM2300D N-Channel Enhancement Mode Power MOSFET Description D The HM2300D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. S Schematic diagram General Features VDS = 20V,ID = 6.0A RDS(ON)

HM2300PR N-Channel Enhancement Mode Power MOSFET Description D The HM2300PR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. S General Features Schematic diagram VDS = 20V,ID = 5.5A RDS(ON)

HM2300C N-Channel Enhancement Mode Power MOSFET Description D The HM2300C uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. S Schematic diagram General Features VDS = 20V,ID = 6.0A RDS(ON)

HM2300DR N-Channel Enhancement Mode Power MOSFET Description The HM2300DR uses advanced trench technology to provide D excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a G battery protection or in other switching application. S General Features VDS = 20V,ID = 8.0A Schematic diagram RDS(ON)

HM2300 N-Channel Enhancement Mode Power MOSFET Description D The HM2300 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. S Schematic diagram General Features VDS = 20V,ID = 4.5A RDS(ON)