HM2309AL MOSFET Datasheet: P-Ch, 60V, 4.6A. Full specification with pinout and replacement list

HM2309AL Specs and Replacement

Type Designator: HM2309AL

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4 nS

Cossⓘ - Output Capacitance: 85 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm

Package: SOT23

HM2309AL substitution

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HM2309AL datasheet

..1. Size:465K cn hmsemi
hm2309al.pdf pdf_icon

HM2309AL H&M Semi P-Channel Enhancement Mode Power MOSFET Description The HM2309AL uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. General Features Schematic diagram VDS =-60V,ID =-4.6A RDS(ON) ... See More ⇒

7.1. Size:593K cn hmsemi
hm2309apr.pdf pdf_icon

HM2309APR P-Channel Enhancement Mode Power MOSFET Description The HM2309APR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. General Features Schematic diagram VDS =-60V,ID =-5A RDS(ON) ... See More ⇒

8.1. Size:873K cn hmsemi
hm2309.pdf pdf_icon

HM2309 P-Channel 60V(D-S) GENERAL DESCRIPTION FEATURES RDS(ON) 215m @VGS=-10V The HM2309 is the P-Channel logic enhancement mode power RDS(ON) 260m @VGS=-4.5V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is especially tailored to Ex... See More ⇒

8.2. Size:1022K cn hmsemi
hm2309b.pdf pdf_icon

HM2309B P-Channel 60V(D-S) GENERAL DESCRIPTION FEATURES RDS(ON) 188m @VGS=-10V The HM2309B is the P-Channel logic enhancement mode power RDS(ON) 266m @VGS=-4.5V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is especially tailored to ... See More ⇒