HM25N08D Datasheet and Replacement
Type Designator: HM25N08D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 110 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 25 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 337 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
Package: DFN5X6-8L
- MOSFET Cross-Reference Search
HM25N08D Datasheet (PDF)
hm25n08d.pdf

HM25N08D N-Channel Enhancement Mode Power MOSFET Description The HM25N08D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =80V,ID =25A RDS(ON)
hm25n03d.pdf

HM25N03D N-Channel Enhancement Mode Power MOSFET Description The HM25N03D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =25A RDS(ON)
hm25n06q.pdf

HM25N06QDescription The HM25N06Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS >60V,ID =25A RDS(ON)
hm25n06d.pdf

HM25N06DDescription The HM25N06D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS >60V,ID =25A RDS(ON)
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: APM2304A | AP99T03GS | RJK0355DSP | BUK952R3-40E | BUK953R2-40E | AP99LT06GS-HF | RJK03M1DPA
Keywords - HM25N08D MOSFET datasheet
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History: APM2304A | AP99T03GS | RJK0355DSP | BUK952R3-40E | BUK953R2-40E | AP99LT06GS-HF | RJK03M1DPA



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