All MOSFET. HM25N08D Datasheet

 

HM25N08D MOSFET. Datasheet pdf. Equivalent


   Type Designator: HM25N08D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 110 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 25 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 55 nC
   trⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 337 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
   Package: DFN5X6-8L

 HM25N08D Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HM25N08D Datasheet (PDF)

 ..1. Size:835K  cn hmsemi
 hm25n08d.pdf

HM25N08D HM25N08D

HM25N08D N-Channel Enhancement Mode Power MOSFET Description The HM25N08D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =80V,ID =25A RDS(ON)

 8.1. Size:583K  cn hmsemi
 hm25n03d.pdf

HM25N08D HM25N08D

HM25N03D N-Channel Enhancement Mode Power MOSFET Description The HM25N03D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =25A RDS(ON)

 8.2. Size:674K  cn hmsemi
 hm25n06q.pdf

HM25N08D HM25N08D

HM25N06QDescription The HM25N06Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS >60V,ID =25A RDS(ON)

 8.3. Size:462K  cn hmsemi
 hm25n06d.pdf

HM25N08D HM25N08D

HM25N06DDescription The HM25N06D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS >60V,ID =25A RDS(ON)

 8.4. Size:547K  cn hmsemi
 hm25n03q.pdf

HM25N08D HM25N08D

HM25N03QDescription The HM25N03Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =25A RDS(ON)

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: IRFP4332PBF

 

 
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