HM25N08D - Даташиты. Аналоги. Основные параметры
Наименование производителя: HM25N08D
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 110 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 80 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 25 A
Tj ⓘ - Максимальная температура канала: 175 °C
tr ⓘ - Время нарастания: 9 ns
Cossⓘ - Выходная емкость: 337 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.016 Ohm
Тип корпуса: DFN5X6-8L
Аналог (замена) для HM25N08D
HM25N08D Datasheet (PDF)
hm25n08d.pdf

HM25N08D N-Channel Enhancement Mode Power MOSFET Description The HM25N08D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =80V,ID =25A RDS(ON)
hm25n03d.pdf

HM25N03D N-Channel Enhancement Mode Power MOSFET Description The HM25N03D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =25A RDS(ON)
hm25n06q.pdf

HM25N06QDescription The HM25N06Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS >60V,ID =25A RDS(ON)
hm25n06d.pdf

HM25N06DDescription The HM25N06D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS >60V,ID =25A RDS(ON)
Другие MOSFET... HM24N20 , HM24N20K , HM24N20KA , HM24N50A , HM25N03D , HM25N03Q , HM25N06D , HM25N06Q , IRF9540N , HM25N50 , HM25P03D , HM25P03K , HM25P03Q , HM25P04D , HM25P04K , HM25P15 , HM25P15D .
History: FKV660S | 2SK3705



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