HM2N15R Specs and Replacement
Type Designator: HM2N15R
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 36 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
Package: SOT-223
HM2N15R substitution
- MOSFET ⓘ Cross-Reference Search
HM2N15R datasheet
hm2n15r.pdf
HM2N15R N-Channel Enhancement Mode Power MOSFET Description D The HM2N15R uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It G can be used in a wide variety of applications. S General Features VDS = 150V,ID = 2A Schematic diagram RDS(ON) ... See More ⇒
hm2n10.pdf
N-Channel Enhancement Mode Power MOSFET Description D The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It G can be used in a wide variety of applications. General Features S VDS = 100V,ID = 2A Schematic diagram RDS(ON) ... See More ⇒
hm2n10b.pdf
HM N-Channel Enhancement Mode Power MOSFET Description D The HM uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It G can be used in a wide variety of applications. S General Features VDS = 100V,ID = 2A Schematic diagram RDS(ON) ... See More ⇒
Detailed specifications: HM2807D, HM2809D, HM2809DR, HM2907, HM2N10, HM2N10B, HM2N10MR, HM2N15PR, 2SK3568, HM2N20, HM2N20MR, HM2N20PR, HM2N20R, HM2N25, HM2N60, HM2N65R, HM2N70
Keywords - HM2N15R MOSFET specs
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