HM2N15R Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: HM2N15R
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 2 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 150 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 2 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 10 ns
Cossⓘ - Выходная емкость: 36 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.3 Ohm
Тип корпуса: SOT-223
Аналог (замена) для HM2N15R
HM2N15R Datasheet (PDF)
hm2n15r.pdf

HM2N15RN-Channel Enhancement Mode Power MOSFET Description DThe HM2N15R uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It Gcan be used in a wide variety of applications. SGeneral Features VDS = 150V,ID = 2A Schematic diagram RDS(ON)
hm2n15pr.pdf

HM2N15PRN-Channel Enhancement Mode Power MOSFET DDescription The HM2N15PR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It Gcan be used in a wide variety of applications. SGeneral Features Schematic diagram VDS = 150V,ID = 2A RDS(ON)
hm2n10.pdf

N-Channel Enhancement Mode Power MOSFET Description DThe uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It Gcan be used in a wide variety of applications. General Features S VDS = 100V,ID = 2A Schematic diagram RDS(ON)
hm2n10b.pdf

HM N-Channel Enhancement Mode Power MOSFET Description DThe HM uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It Gcan be used in a wide variety of applications. SGeneral Features VDS = 100V,ID = 2A Schematic diagram RDS(ON)
Другие MOSFET... HM2807D , HM2809D , HM2809DR , HM2907 , HM2N10 , HM2N10B , HM2N10MR , HM2N15PR , 5N65 , HM2N20 , HM2N20MR , HM2N20PR , HM2N20R , HM2N25 , HM2N60 , HM2N65R , HM2N70 .
History: SUD40N08-16 | RQA0009SXAQS | PSMN4R4-80PS
History: SUD40N08-16 | RQA0009SXAQS | PSMN4R4-80PS



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