All MOSFET. HM2N60 Datasheet

 

HM2N60 Datasheet and Replacement


   Type Designator: HM2N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 54 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 15 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 4.5 Ohm
   Package: TO220C
 

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HM2N60 Datasheet (PDF)

 ..1. Size:822K  cn hmsemi
 hm2n60.pdf pdf_icon

HM2N60

N RN-CHANNEL MOSFET HM2N60 MAIN CHARACTERISTICS Package 2.0 A ID 600 V VDSS Rdson 4.5 @Vgs=10V6.0 nC Qg APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge UPS

 9.1. Size:1563K  cn hmsemi
 hm2n65r.pdf pdf_icon

HM2N60

HM2N65RGeneral Description VDSS 650 V HM2N65R the silicon N-channel Enhanced ID 2 A PD(TC=25) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 7.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and

Datasheet: HM2N10MR , HM2N15PR , HM2N15R , HM2N20 , HM2N20MR , HM2N20PR , HM2N20R , HM2N25 , 75N75 , HM2N65R , HM2N70 , HM2N70R , HM2P10PR , HM2P10R , HM3018 , HM3018JR , HM3018KR .

History: SSM4424GM | RQA0008NXAQS | BLP04N10-B | S-LNTK2575LT1G | SM3116NSU | AM2394NE | ME4825

Keywords - HM2N60 MOSFET datasheet

 HM2N60 cross reference
 HM2N60 equivalent finder
 HM2N60 lookup
 HM2N60 substitution
 HM2N60 replacement

 

 
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