HM2N60 Specs and Replacement

Type Designator: HM2N60

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 54 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 23 nS

Cossⓘ - Output Capacitance: 15 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 4.5 Ohm

Package: TO220C

HM2N60 substitution

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HM2N60 datasheet

 ..1. Size:822K  cn hmsemi
 hm2n60.pdf pdf_icon

HM2N60

N R N-CHANNEL MOSFET HM2N60 MAIN CHARACTERISTICS Package 2.0 A ID 600 V VDSS Rdson 4.5 @Vgs=10V 6.0 nC Qg APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge UPS ... See More ⇒

 9.1. Size:1563K  cn hmsemi
 hm2n65r.pdf pdf_icon

HM2N60

HM2N65R General Description VDSS 650 V HM2N65R the silicon N-channel Enhanced ID 2 A PD(TC=25 ) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 7.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and... See More ⇒

Detailed specifications: HM2N10MR, HM2N15PR, HM2N15R, HM2N20, HM2N20MR, HM2N20PR, HM2N20R, HM2N25, 18N50, HM2N65R, HM2N70, HM2N70R, HM2P10PR, HM2P10R, HM3018, HM3018JR, HM3018KR

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.