All MOSFET. HM2N65R Datasheet

 

HM2N65R Datasheet and Replacement


   Type Designator: HM2N65R
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 50 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 9.5 Ohm
   Package: SOT223
 

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HM2N65R Datasheet (PDF)

 ..1. Size:1563K  cn hmsemi
 hm2n65r.pdf pdf_icon

HM2N65R

HM2N65RGeneral Description VDSS 650 V HM2N65R the silicon N-channel Enhanced ID 2 A PD(TC=25) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 7.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and

 9.1. Size:822K  cn hmsemi
 hm2n60.pdf pdf_icon

HM2N65R

N RN-CHANNEL MOSFET HM2N60 MAIN CHARACTERISTICS Package 2.0 A ID 600 V VDSS Rdson 4.5 @Vgs=10V6.0 nC Qg APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge UPS

Datasheet: HM2N15PR , HM2N15R , HM2N20 , HM2N20MR , HM2N20PR , HM2N20R , HM2N25 , HM2N60 , 2N60 , HM2N70 , HM2N70R , HM2P10PR , HM2P10R , HM3018 , HM3018JR , HM3018KR , HM3018SR .

History: CJD01N80 | APT47N60BCFG | CJU04N65 | SSM3K335R | 7N65KL-T2Q-T | 2SK2643-01 | NCV8408

Keywords - HM2N65R MOSFET datasheet

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