HM2P10R Datasheet and Replacement
Type Designator: HM2P10R
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 2.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 32 nS
Cossⓘ - Output Capacitance: 60 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm
Package: SOT223
HM2P10R substitution
HM2P10R Datasheet (PDF)
hm2p10r.pdf
HM2P10R Power MOSFET Datasheet P-Channel Enhancement Mode MOSFET FEATURES APPLICATIONS Battery Charge RDS(Typ.)
hm2p10pr.pdf
HM2P10PR Power MOSFET Datasheet P-Channel Enhancement Mode MOSFET FEATURES APPLICATIONS Battery Charge RDS(Typ.)
Datasheet: HM2N20PR , HM2N20R , HM2N25 , HM2N60 , HM2N65R , HM2N70 , HM2N70R , HM2P10PR , IRFZ24N , HM3018 , HM3018JR , HM3018KR , HM3018SR , HM30N02D , HM30N02K , HM30N02Q , HM30N03K .
History: UT3N06G-TN3-R | HM2N70
Keywords - HM2P10R MOSFET datasheet
HM2P10R cross reference
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HM2P10R substitution
HM2P10R replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and datasheets
History: UT3N06G-TN3-R | HM2N70
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