All MOSFET. HM2P10R Datasheet

 

HM2P10R Datasheet and Replacement


   Type Designator: HM2P10R
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 32 nS
   Cossⓘ - Output Capacitance: 60 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm
   Package: SOT223
 

 HM2P10R substitution

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HM2P10R Datasheet (PDF)

 ..1. Size:595K  cn hmsemi
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HM2P10R

HM2P10R Power MOSFET Datasheet P-Channel Enhancement Mode MOSFET FEATURES APPLICATIONS Battery Charge RDS(Typ.)

 8.1. Size:334K  cn hmsemi
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HM2P10R

HM2P10PR Power MOSFET Datasheet P-Channel Enhancement Mode MOSFET FEATURES APPLICATIONS Battery Charge RDS(Typ.)

Datasheet: HM2N20PR , HM2N20R , HM2N25 , HM2N60 , HM2N65R , HM2N70 , HM2N70R , HM2P10PR , AON6380 , HM3018 , HM3018JR , HM3018KR , HM3018SR , HM30N02D , HM30N02K , HM30N02Q , HM30N03K .

History: 2SK2883 | 2SK2733

Keywords - HM2P10R MOSFET datasheet

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