HM30N03K Datasheet and Replacement
Type Designator: HM30N03K
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 30 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 142 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
Package: TO252
HM30N03K substitution
HM30N03K Datasheet (PDF)
hm30n03k.pdf

HM30N03KDescription The 30 K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =30A RDS(ON)
hm30n04q.pdf

HM30N04QN-Channel Enhancement Mode Power MOSFET Description The HM30N04Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =30A RDS(ON)
hm30n02k.pdf

HM30N02K N-Channel Enhancement Mode Power MOSFET Description The HM30N02K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =30A RDS(ON)
hm30n02d.pdf

HM30N02DDescription The HM30N02D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =30A RDS(ON)
Datasheet: HM2P10R , HM3018 , HM3018JR , HM3018KR , HM3018SR , HM30N02D , HM30N02K , HM30N02Q , NCEP15T14 , HM30N04D , HM30N04Q , HM30N10 , HM30N10D , HM30N10K , HM30P02K , HM30P03Q , HM30P10K .
History: FQI2N30TU | LP3218DT1G
Keywords - HM30N03K MOSFET datasheet
HM30N03K cross reference
HM30N03K equivalent finder
HM30N03K lookup
HM30N03K substitution
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History: FQI2N30TU | LP3218DT1G



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