HM30N03K - Даташиты. Аналоги. Основные параметры
Наименование производителя: HM30N03K
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 40 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 30 A
Tj ⓘ - Максимальная температура канала: 175 °C
tr ⓘ - Время нарастания: 12 ns
Cossⓘ - Выходная емкость: 142 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.014 Ohm
Тип корпуса: TO252
Аналог (замена) для HM30N03K
HM30N03K Datasheet (PDF)
hm30n03k.pdf
HM30N03KDescription The 30 K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =30A RDS(ON)
hm30n04q.pdf
HM30N04QN-Channel Enhancement Mode Power MOSFET Description The HM30N04Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =30A RDS(ON)
hm30n02k.pdf
HM30N02K N-Channel Enhancement Mode Power MOSFET Description The HM30N02K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =30A RDS(ON)
hm30n02d.pdf
HM30N02DDescription The HM30N02D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =30A RDS(ON)
Другие MOSFET... HM2P10R , HM3018 , HM3018JR , HM3018KR , HM3018SR , HM30N02D , HM30N02K , HM30N02Q , IRF1405 , HM30N04D , HM30N04Q , HM30N10 , HM30N10D , HM30N10K , HM30P02K , HM30P03Q , HM30P10K .
History: AP9579GI-HF | RJK0371DSP | FDH5500 | STP14NK60Z | MPSP65M990
History: AP9579GI-HF | RJK0371DSP | FDH5500 | STP14NK60Z | MPSP65M990
Список транзисторов
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