HM30P55 Specs and Replacement
Type Designator: HM30P55
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 90 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 30 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 240 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
Package: TO220
HM30P55 substitution
- MOSFET ⓘ Cross-Reference Search
HM30P55 datasheet
hm30p55.pdf
P-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-55V,ID =-30A RDS(ON) ... See More ⇒
hm30p55k.pdf
P-Channel Enhancement Mode Power MOSFET DESCRIPTION The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =-55V,ID =-30A RDS(ON) ... See More ⇒
hm30p10k.pdf
P-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-30A Schematic diagram RDS(ON) ... See More ⇒
hm30p03q.pdf
HM30P03Q -30VDS 20VGS -30A(ID) P-Channel Enha ncement Mode MOSFET Features Pin Description Pin Description VDSS=-30V VGSS= 20V ID=-30A RDS(ON)=14m (max.)@VGS=-10V RDS(ON)=22m (max.)@VGS=-4.5V Low Dense Cell Design Reliable and Rugged Advanced trench process technology Applications Synchronous Rectification Power Management in Inverter ... See More ⇒
Detailed specifications: HM30N04D, HM30N04Q, HM30N10, HM30N10D, HM30N10K, HM30P02K, HM30P03Q, HM30P10K, K2611, HM30P55K, HM3205, HM3205B, HM3205D, HM3207, HM3207B, HM3207BD, HM3207D
Keywords - HM30P55 MOSFET specs
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