HM32N20 Datasheet and Replacement
Type Designator: HM32N20
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 256 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 32 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 32 nS
Cossⓘ - Output Capacitance: 370 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
Package: TO220
HM32N20 substitution
HM32N20 Datasheet (PDF)
hm32n20 hm32n20f.pdf

/ 200V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using True semis - 32A, 200V, RDS(on) typ. = 0.080@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 50 nC)This advanced technology has been especially tailored to - High ruggednessminimize on-state resistance, provide superior switching - Fast switching
Datasheet: HM3205 , HM3205B , HM3205D , HM3207 , HM3207B , HM3207BD , HM3207D , HM3207T , IRFZ44N , HM32N20F , HM3305 , HM3305D , HM3306 , HM3307 , HM3307A , HM3307B , HM3400 .
History: 2N65G-TF3T-T | STN3414 | CS6N70F | SIA519EDJ | BUK9K18-40E | YJG90G10A
Keywords - HM32N20 MOSFET datasheet
HM32N20 cross reference
HM32N20 equivalent finder
HM32N20 lookup
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History: 2N65G-TF3T-T | STN3414 | CS6N70F | SIA519EDJ | BUK9K18-40E | YJG90G10A



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