All MOSFET. HM32N20 Datasheet

 

HM32N20 MOSFET. Datasheet pdf. Equivalent


   Type Designator: HM32N20
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 256 W
   Maximum Drain-Source Voltage |Vds|: 200 V
   Maximum Gate-Source Voltage |Vgs|: 30 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
   Maximum Drain Current |Id|: 32 A
   Maximum Junction Temperature (Tj): 150 °C
   Total Gate Charge (Qg): 50 nC
   Rise Time (tr): 32 nS
   Drain-Source Capacitance (Cd): 370 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.1 Ohm
   Package: TO220

 HM32N20 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HM32N20 Datasheet (PDF)

 ..1. Size:3392K  cn hmsemi
 hm32n20 hm32n20f.pdf

HM32N20 HM32N20

/ 200V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using True semis - 32A, 200V, RDS(on) typ. = 0.080@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 50 nC)This advanced technology has been especially tailored to - High ruggednessminimize on-state resistance, provide superior switching - Fast switching

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: 10N65KL-TM3-T

 

 
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