All MOSFET. HM32N20 Datasheet

 

HM32N20 MOSFET. Datasheet pdf. Equivalent


   Type Designator: HM32N20
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 256 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 32 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 50 nC
   trⓘ - Rise Time: 32 nS
   Cossⓘ - Output Capacitance: 370 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: TO220

 HM32N20 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HM32N20 Datasheet (PDF)

 ..1. Size:3392K  cn hmsemi
 hm32n20 hm32n20f.pdf

HM32N20 HM32N20

/ 200V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using True semis - 32A, 200V, RDS(on) typ. = 0.080@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 50 nC)This advanced technology has been especially tailored to - High ruggednessminimize on-state resistance, provide superior switching - Fast switching

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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