HM3413 MOSFET Datasheet: P-Ch, 20V, 3A. Full specification with pinout and replacement list

HM3413 Specs and Replacement

   Type Designator: HM3413
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 75 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
   Package: SOT23

HM3413 substitution

- MOSFET ⓘ Cross-Reference Search

HM3413 datasheet

..1. Size:613K cn hmsemi
hm3413.pdf pdf_icon

HM3413 P-Channel Enhancement Mode Power MOSFET DESCRIPTION D The HM3413 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S GENERAL FEATURES Schematic diagram VDS = -20V,ID = -3A RDS(ON) ... See More ⇒

0.1. Size:98K chenmko
chm3413kgp.pdf pdf_icon

CHENMKO ENTERPRISE CO.,LTD CHM3413KGP SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 3.5 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-88A/SOT-353 FEATURE * Small flat package. (SC-88A ) * High density cell design for extremely low RDS(ON). * Rugged and reliable. (1) (5) * Hi... See More ⇒

0.2. Size:98K chenmko
chm3413sgp.pdf pdf_icon

CHENMKO ENTERPRISE CO.,LTD CHM3413SGP SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 3.5 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-88/SOT-363 FEATURE * Small flat package. (SC-88 ) * High density cell design for extremely low RDS(ON). * Rugged and reliable. (6) (1) * Hig... See More ⇒

0.3. Size:537K cn hmsemi
hm3413b.pdf pdf_icon

HM3413B P-Channel Enhancement Mode Power MOSFET DESCRIPTION D The HM3413B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S GENERAL FEATURES Schematic diagram VDS = -20V,ID = -3A RDS(ON) ... See More ⇒

Detailed specifications: HM3401 , HM3401B , HM3401C , HM3401D , HM3401PR , HM3406B , HM3407A , HM3407B , IRFB4115 , HM3413B , HM3414 , HM3414B , HM3415E , HM3416B , HM3421 , HM3421B , HM3422 .