All MOSFET. HM35N03Q Datasheet

 

HM35N03Q Datasheet and Replacement


   Type Designator: HM35N03Q
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 35 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 600 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
   Package: DFN3X3EP
 

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HM35N03Q Datasheet (PDF)

 ..1. Size:384K  cn hmsemi
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HM35N03Q

HM35N03QDescription The HM35N03Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =35A RDS(ON)

 7.1. Size:444K  cn hmsemi
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HM35N03Q

HM35N03D N-Channel Enhancement Mode Power MOSFET Description The HM35N03D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =35A RDS(ON)

Datasheet: HM3415E , HM3416B , HM3421 , HM3421B , HM3422 , HM3422A , HM3426B , HM35N03D , IRF1010E , HM35P03 , HM35P03D , HM35P03K , HM35P04D , HM3710 , HM3710K , HM3800D , HM3808 .

History: CS3N50DU | BUK114-50L-S | AP9564GM-HF | 4835 | SVF31N30CSTR | 2SK1347

Keywords - HM35N03Q MOSFET datasheet

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