HM35N03Q Specs and Replacement

Type Designator: HM35N03Q

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 35 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 35 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 600 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm

Package: DFN3X3EP

HM35N03Q substitution

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HM35N03Q datasheet

 ..1. Size:384K  cn hmsemi
 hm35n03q.pdf pdf_icon

HM35N03Q

HM35N03Q Description The HM35N03Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =35A RDS(ON) ... See More ⇒

 7.1. Size:444K  cn hmsemi
 hm35n03d.pdf pdf_icon

HM35N03Q

HM35N03D N-Channel Enhancement Mode Power MOSFET Description The HM35N03D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =35A RDS(ON) ... See More ⇒

Detailed specifications: HM3415E, HM3416B, HM3421, HM3421B, HM3422, HM3422A, HM3426B, HM35N03D, IRF9540N, HM35P03, HM35P03D, HM35P03K, HM35P04D, HM3710, HM3710K, HM3800D, HM3808

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs