All MOSFET. HM35N03Q Datasheet

 

HM35N03Q MOSFET. Datasheet pdf. Equivalent


   Type Designator: HM35N03Q
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 35 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 19 nC
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 600 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
   Package: DFN3X3EP

 HM35N03Q Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HM35N03Q Datasheet (PDF)

 ..1. Size:384K  cn hmsemi
 hm35n03q.pdf

HM35N03Q HM35N03Q

HM35N03QDescription The HM35N03Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =35A RDS(ON)

 7.1. Size:444K  cn hmsemi
 hm35n03d.pdf

HM35N03Q HM35N03Q

HM35N03D N-Channel Enhancement Mode Power MOSFET Description The HM35N03D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =35A RDS(ON)

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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