All MOSFET. HM3N10MR Datasheet

 

HM3N10MR Datasheet and Replacement


   Type Designator: HM3N10MR
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 24 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm
   Package: SOT23
 

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HM3N10MR Datasheet (PDF)

 ..1. Size:941K  cn hmsemi
hm3n10mr.pdf pdf_icon

HM3N10MR

HM3N10MRN-Channel Enhancement Mode Power MOSFET Description The HM3N10MR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID = 3A Schematic diagram RDS(ON)

 8.1. Size:645K  cn hmsemi
hm3n10pr.pdf pdf_icon

HM3N10MR

HM3N10PR N-Channel Enhancement Mode Power MOSFET Description DThe HM3N10PR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It Gcan be used in a wide variety of applications. SGeneral Features VDS = 100V,ID = 3A Schematic diagram RDS(ON)

 9.1. Size:425K  cn hmsemi
hm3n120f.pdf pdf_icon

HM3N10MR

HM3N120FGeneral Description VDSS 1200 V HM3N120F , the silicon N-channel Enhanced ID 3 A PD(TC=25) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 5.1 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturizatio

 9.2. Size:422K  cn hmsemi
hm3n150f.pdf pdf_icon

HM3N10MR

HM3N150AGeneral Description VDSS 1500 V , the silicon N-channel Enhanced I 3 A DPD(TC=25) TBD W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 5.0 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturizat

Datasheet: HM35P03 , HM35P03D , HM35P03K , HM35P04D , HM3710 , HM3710K , HM3800D , HM3808 , IRFB3607 , HM3N10PR , HM3N120A , HM3N120F , HM3N150A , HM3N150F , HM3N25I , HM3N30PR , HM3N40PR .

History: IXFX120N30P3 | IXFT23N80Q | 14N50G-TF1-T | IXFT16N90Q | CEN2321A | 14N50L-TA3-T | BRCS120P012MC

Keywords - HM3N10MR MOSFET datasheet

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