HM3N10MR MOSFET Datasheet: N-Ch, 100V, 3A. Full specification with pinout and replacement list

HM3N10MR Specs and Replacement

   Type Designator: HM3N10MR
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 24 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm
   Package: SOT23

HM3N10MR substitution

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HM3N10MR datasheet

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HM3N10MR N-Channel Enhancement Mode Power MOSFET Description The HM3N10MR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID = 3A Schematic diagram RDS(ON) ... See More ⇒

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HM3N120F General Description VDSS 1200 V HM3N120F , the silicon N-channel Enhanced ID 3 A PD(TC=25 ) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 5.1 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturizatio... See More ⇒

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HM3N150A General Description VDSS 1500 V , the silicon N-channel Enhanced I 3 A D PD(TC=25 ) TBD W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 5.0 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturizat... See More ⇒