HM3N10MR - описание и поиск аналогов

 ..1. Size:941K  cn hmsemi
 hm3n10mr.pdf 

HM3N10MR N-Channel Enhancement Mode Power MOSFET Description The HM3N10MR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID = 3A Schematic diagram RDS(ON)

 8.1. Size:645K  cn hmsemi
 hm3n10pr.pdf 

 9.1. Size:425K  cn hmsemi
 hm3n120f.pdf 

HM3N120F General Description VDSS 1200 V HM3N120F , the silicon N-channel Enhanced ID 3 A PD(TC=25 ) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 5.1 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturizatio

 9.2. Size:422K  cn hmsemi
 hm3n150f.pdf 

HM3N150A General Description VDSS 1500 V , the silicon N-channel Enhanced I 3 A D PD(TC=25 ) TBD W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 5.0 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturizat

 9.3. Size:610K  cn hmsemi
 hm3n120a.pdf 

HM3N120A General Description VDSS 1200 V HM3N120A ANR, the silicon N-channel Enhanced ID 3 A RDS(ON)Typ 5.1 VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher effi

 9.4. Size:358K  cn hmsemi
 hm3n150a.pdf 

General Description VDSS 1500 V HM3N150A the silicon N-channel Enhanced ID 3 A PD(TC=25 ) TBD W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 5.0 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturizatio