HM3N150A Specs and Replacement

Type Designator: HM3N150A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 200 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16.7 nS

Cossⓘ - Output Capacitance: 104 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 8 Ohm

Package: TO3PH

HM3N150A substitution

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HM3N150A datasheet

 ..1. Size:358K  cn hmsemi
 hm3n150a.pdf pdf_icon

HM3N150A

General Description VDSS 1500 V HM3N150A the silicon N-channel Enhanced ID 3 A PD(TC=25 ) TBD W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 5.0 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturizatio... See More ⇒

 7.1. Size:422K  cn hmsemi
 hm3n150f.pdf pdf_icon

HM3N150A

HM3N150A General Description VDSS 1500 V , the silicon N-channel Enhanced I 3 A D PD(TC=25 ) TBD W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 5.0 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturizat... See More ⇒

 9.1. Size:425K  cn hmsemi
 hm3n120f.pdf pdf_icon

HM3N150A

HM3N120F General Description VDSS 1200 V HM3N120F , the silicon N-channel Enhanced ID 3 A PD(TC=25 ) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 5.1 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturizatio... See More ⇒

 9.2. Size:941K  cn hmsemi
 hm3n10mr.pdf pdf_icon

HM3N150A

HM3N10MR N-Channel Enhancement Mode Power MOSFET Description The HM3N10MR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID = 3A Schematic diagram RDS(ON) ... See More ⇒

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Detailed specifications: HM3710, HM3710K, HM3800D, HM3808, HM3N10MR, HM3N10PR, HM3N120A, HM3N120F, 5N65, HM3N150F, HM3N25I, HM3N30PR, HM3N40PR, HM3N40R, HM3N70, HM3N80, HM3N90F

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