HM3N25I Specs and Replacement

Type Designator: HM3N25I

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 30 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 31 nS

Cossⓘ - Output Capacitance: 33 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm

Package: TO251

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HM3N25I datasheet

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HM3N25I

HM3N25I Silicon N-Channel Power MOSFET General Description VDSS 250 V HM3N25I, the silicon N-channel Enhanced ID 3.0 A PD(TC=25 ) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON) 1.0 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit ... See More ⇒

Detailed specifications: HM3800D, HM3808, HM3N10MR, HM3N10PR, HM3N120A, HM3N120F, HM3N150A, HM3N150F, IRFB3607, HM3N30PR, HM3N40PR, HM3N40R, HM3N70, HM3N80, HM3N90F, HM3N90I, HM3P10MR

Keywords - HM3N25I MOSFET specs

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