All MOSFET. HM3N25I Datasheet

 

HM3N25I Datasheet and Replacement


   Type Designator: HM3N25I
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 31 nS
   Cossⓘ - Output Capacitance: 33 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
   Package: TO251
 

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HM3N25I Datasheet (PDF)

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HM3N25I

HM3N25ISilicon N-Channel Power MOSFETGeneral Description VDSS 250 V HM3N25I, the silicon N-channel Enhanced ID 3.0 A PD(TC=25) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON) 1.0 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit

Datasheet: HM3800D , HM3808 , HM3N10MR , HM3N10PR , HM3N120A , HM3N120F , HM3N150A , HM3N150F , AON7506 , HM3N30PR , HM3N40PR , HM3N40R , HM3N70 , HM3N80 , HM3N90F , HM3N90I , HM3P10MR .

Keywords - HM3N25I MOSFET datasheet

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