All MOSFET. HM3N40PR Datasheet

 

HM3N40PR Datasheet and Replacement


   Type Designator: HM3N40PR
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 1 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 21 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 3.4 Ohm
   Package: SOT89
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HM3N40PR Datasheet (PDF)

 ..1. Size:1060K  cn hmsemi
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HM3N40PR

HM3N40PR Silicon N-Channel Power MOSFETGeneral Description VDSS 400 V HM3N40PR, the silicon N-channel Enhanced ID 3 A PD (TC=25) 2.5 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)TYP 2.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching ci

 8.1. Size:884K  cn hmsemi
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HM3N40PR

HM3N40R Silicon N-Channel Power MOSFETGeneral Description VDSS 400 V HM3N40R, the silicon N-channel Enhanced ID 3 A PD (TC=25) 2.5 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)TYP 2.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circ

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: AUIRF7379Q | STB200NF03 | FQU13N10 | SFB053N100C3 | NTMFS4837NHT1G | SWMI4N65D | BMS3003

Keywords - HM3N40PR MOSFET datasheet

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