All MOSFET. HM3N40R Datasheet

 

HM3N40R MOSFET. Datasheet pdf. Equivalent


   Type Designator: HM3N40R
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 1 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 5 nC
   trⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 21 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 3.4 Ohm
   Package: SOT223

 HM3N40R Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HM3N40R Datasheet (PDF)

 ..1. Size:884K  cn hmsemi
 hm3n40r.pdf

HM3N40R HM3N40R

HM3N40R Silicon N-Channel Power MOSFETGeneral Description VDSS 400 V HM3N40R, the silicon N-channel Enhanced ID 3 A PD (TC=25) 2.5 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)TYP 2.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circ

 8.1. Size:1060K  cn hmsemi
 hm3n40pr.pdf

HM3N40R HM3N40R

HM3N40PR Silicon N-Channel Power MOSFETGeneral Description VDSS 400 V HM3N40PR, the silicon N-channel Enhanced ID 3 A PD (TC=25) 2.5 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)TYP 2.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching ci

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: HM3401

 

 
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