All MOSFET. HM3N90I Datasheet

 

HM3N90I MOSFET. Datasheet pdf. Equivalent


   Type Designator: HM3N90I
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 16 nC
   trⓘ - Rise Time: 32 nS
   Cossⓘ - Output Capacitance: 44 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 5.5 Ohm
   Package: TO251

 HM3N90I Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HM3N90I Datasheet (PDF)

 ..1. Size:914K  cn hmsemi
 hm3n90i.pdf

HM3N90I HM3N90I

HM3N90ISilicon N-Channel Power MOSFET General Description VDSS 900 VHM3N90I, the silicon N-channel EnhancedID 3 APD(TC=25) 75 WVDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 5 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for

 8.1. Size:951K  cn hmsemi
 hm3n90f.pdf

HM3N90I HM3N90I

HM3N90FSilicon N-Channel Power MOSFET General Description VDSS 900 V HM3N90F, the silicon N-channel Enhanced VDMOSFET, ID 3 A PD(TC=25) 30 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 4.7 the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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