HM40N10 Specs and Replacement
Type Designator: HM40N10
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 140 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 40 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 290 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm
Package: TO220
HM40N10 substitution
- MOSFET ⓘ Cross-Reference Search
HM40N10 datasheet
hm40n10.pdf
HM40N10 N-Channel Enhancement Mode Power MOSFET Description The HM40N10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =40A RDS(ON) ... See More ⇒
hm40n10k.pdf
N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =40A RDS(ON) ... See More ⇒
hm40n10ka.pdf
HM40N10KA N-Channel Enhancement Mode Power MOSFET Description The HM40N10KA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =40A RDS(ON) ... See More ⇒
hm40n15ka.pdf
N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =150V,ID =40A RDS(ON) ... See More ⇒
Detailed specifications: HM3N90F, HM3N90I, HM3P10MR, HM4030, HM4030D, HM40N04D, HM40N04K, HM40N06D, 2SK3568, HM40N10K, HM40N10KA, HM40N15K, HM40N15KA, HM40N20, HM40N20D, HM40P04K, HM40P06K
Keywords - HM40N10 MOSFET specs
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