All MOSFET. HM40N10 Datasheet

 

HM40N10 MOSFET. Datasheet pdf. Equivalent


   Type Designator: HM40N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 140 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 40 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 94 nC
   trⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 290 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm
   Package: TO220

 HM40N10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HM40N10 Datasheet (PDF)

 ..1. Size:798K  cn hmsemi
 hm40n10.pdf

HM40N10 HM40N10

HM40N10 N-Channel Enhancement Mode Power MOSFET Description The HM40N10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =40A RDS(ON)

 0.1. Size:534K  cn hmsemi
 hm40n10k.pdf

HM40N10 HM40N10

N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =40A RDS(ON)

 0.2. Size:608K  cn hmsemi
 hm40n10ka.pdf

HM40N10 HM40N10

HM40N10KAN-Channel Enhancement Mode Power MOSFET Description The HM40N10KA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =40A RDS(ON)

 8.1. Size:608K  cn hmsemi
 hm40n15ka.pdf

HM40N10 HM40N10

N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =150V,ID =40A RDS(ON)

 8.2. Size:511K  cn hmsemi
 hm40n15k.pdf

HM40N10 HM40N10

HM40N15K N-Channel Enhancement Mode Power MOSFET Description The HM40N15K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =150V,ID =40A RDS(ON)

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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