HM40N10 - Даташиты. Аналоги. Основные параметры
Наименование производителя: HM40N10
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 140 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 40 A
Tj ⓘ - Максимальная температура канала: 175 °C
tr ⓘ - Время нарастания: 11 ns
Cossⓘ - Выходная емкость: 290 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.017 Ohm
Тип корпуса: TO220
Аналог (замена) для HM40N10
HM40N10 Datasheet (PDF)
hm40n10.pdf
HM40N10 N-Channel Enhancement Mode Power MOSFET Description The HM40N10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =40A RDS(ON)
hm40n10k.pdf
N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =40A RDS(ON)
hm40n10ka.pdf
HM40N10KAN-Channel Enhancement Mode Power MOSFET Description The HM40N10KA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =40A RDS(ON)
hm40n15ka.pdf
N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =150V,ID =40A RDS(ON)
Другие MOSFET... HM3N90F , HM3N90I , HM3P10MR , HM4030 , HM4030D , HM40N04D , HM40N04K , HM40N06D , 2SK3568 , HM40N10K , HM40N10KA , HM40N15K , HM40N15KA , HM40N20 , HM40N20D , HM40P04K , HM40P06K .
History: HM40N06D
History: HM40N06D
Список транзисторов
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