HM40P04K MOSFET. Datasheet pdf. Equivalent
Type Designator: HM40P04K
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 80 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 40 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 72 nC
trⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 370 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
Package: TO252
HM40P04K Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HM40P04K Datasheet (PDF)
hm40p04k.pdf
HM40P04KP-Channel Enhancement Mode Power MOSFET Description The HM40P04K uses advanced trench technology and design to provide excellent RDS(ON) with low gatecharge .This device is well suited for high current load applications. General Features Schematic diagram VDS =-40V,ID =-40A RDS(ON)
hm40p06k.pdf
HM40P06KP-Channel Enhancement Mode Power MOSFET Description The HM40P06K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-60V,ID =-40A RDS(ON)
Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , SKD502T , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .
LIST
Last Update
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918