All MOSFET. HM40P04K Datasheet

 

HM40P04K Datasheet and Replacement


   Type Designator: HM40P04K
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 80 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 40 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 72 nC
   trⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 370 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
   Package: TO252
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HM40P04K Datasheet (PDF)

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HM40P04K

HM40P04KP-Channel Enhancement Mode Power MOSFET Description The HM40P04K uses advanced trench technology and design to provide excellent RDS(ON) with low gatecharge .This device is well suited for high current load applications. General Features Schematic diagram VDS =-40V,ID =-40A RDS(ON)

 8.1. Size:357K  cn hmsemi
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HM40P04K

HM40P06KP-Channel Enhancement Mode Power MOSFET Description The HM40P06K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-60V,ID =-40A RDS(ON)

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: SSPL50N30H | AP2301EN | HSM3006 | SSF4607D

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