All MOSFET. HM4110T Datasheet


HM4110T MOSFET. Datasheet pdf. Equivalent

Type Designator: HM4110T

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 385 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 210 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 377 nC

Rise Time (tr): 45 nS

Drain-Source Capacitance (Cd): 1061 pF

Maximum Drain-Source On-State Resistance (Rds): 0.004 Ohm

Package: TO247

HM4110T Transistor Equivalent Substitute - MOSFET Cross-Reference Search


HM4110T Datasheet (PDF)

..1. hm4110t.pdf Size:556K _cn_hmsemi

HM4110T HM4110T

HM4110TN-Channel Enhancement Mode Power MOSFET Description The HM4110T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of other applications. General Features VDSS =100V,ID =210A RDS(ON)

8.1. hm4110.pdf Size:732K _cn_hmsemi

HM4110T HM4110T

100VDS25VGS170A(ID) N-Channel Enha ncement Mode MOSFET Features Pin Description VDSS= 0VVGSS=25VID=1 0A RDS(ON)=5 m(max.)@VGS=10V Low Dense Cell Design Reliable and Rugged Advanced trench process technology Applications Synchronous Rectification Power Manage

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