All MOSFET. HM4110T Datasheet

 

HM4110T MOSFET. Datasheet pdf. Equivalent


   Type Designator: HM4110T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 385 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 210 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 377 nC
   trⓘ - Rise Time: 45 nS
   Cossⓘ - Output Capacitance: 1061 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
   Package: TO247

 HM4110T Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HM4110T Datasheet (PDF)

 ..1. Size:556K  cn hmsemi
 hm4110t.pdf

HM4110T HM4110T

HM4110TN-Channel Enhancement Mode Power MOSFET Description The HM4110T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of other applications. General Features VDSS =100V,ID =210A RDS(ON)

 8.1. Size:732K  cn hmsemi
 hm4110.pdf

HM4110T HM4110T

100VDS25VGS170A(ID) N-Channel Enha ncement Mode MOSFET Features Pin Description VDSS= 0VVGSS=25VID=1 0A RDS(ON)=5 m(max.)@VGS=10V Low Dense Cell Design Reliable and Rugged Advanced trench process technology Applications Synchronous Rectification Power Manage

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