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HM4110T Specs and Replacement


   Type Designator: HM4110T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 385 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 210 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 45 nS
   Cossⓘ - Output Capacitance: 1061 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
   Package: TO247
 

 HM4110T substitution

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HM4110T Specs

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HM4110T

HM4110T N-Channel Enhancement Mode Power MOSFET Description The HM4110T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of other applications. General Features VDSS =100V,ID =210A RDS(ON) ... See More ⇒

 8.1. Size:732K  cn hmsemi
hm4110.pdf pdf_icon

HM4110T

100VDS 25VGS 170A(ID) N-Channel Enha ncement Mode MOSFET Features Pin Description VDSS= 0V VGSS= 25V ID=1 0A RDS(ON)=5 m (max.)@VGS=10V Low Dense Cell Design Reliable and Rugged Advanced trench process technology Applications Synchronous Rectification Power Manage... See More ⇒

Detailed specifications: HM40N10KA , HM40N15K , HM40N15KA , HM40N20 , HM40N20D , HM40P04K , HM40P06K , HM4110 , STF13NM60N , HM4240 , HM4260 , HM4264 , HM4264B , HM4302 , HM4302B , 2SK68A , CRJF390N65GC .

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Keywords - HM4110T MOSFET specs

 HM4110T cross reference
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