HM4110T Datasheet and Replacement
Type Designator: HM4110T
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 385 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 210 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 45 nS
Cossⓘ - Output Capacitance: 1061 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
Package: TO247
HM4110T substitution
HM4110T Datasheet (PDF)
hm4110t.pdf

HM4110TN-Channel Enhancement Mode Power MOSFET Description The HM4110T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of other applications. General Features VDSS =100V,ID =210A RDS(ON)
hm4110.pdf

100VDS25VGS170A(ID) N-Channel Enha ncement Mode MOSFET Features Pin Description VDSS= 0VVGSS=25VID=1 0A RDS(ON)=5 m(max.)@VGS=10V Low Dense Cell Design Reliable and Rugged Advanced trench process technology Applications Synchronous Rectification Power Manage
Datasheet: HM40N10KA , HM40N15K , HM40N15KA , HM40N20 , HM40N20D , HM40P04K , HM40P06K , HM4110 , IRF2807 , HM4240 , HM4260 , HM4264 , HM4264B , HM4302 , HM4302B , 2SK68A , CRJF390N65GC .
History: 2N7002L
Keywords - HM4110T MOSFET datasheet
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HM4110T substitution
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History: 2N7002L



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