HM4302 Datasheet: MOSFET, N-Ch, 30V, 27A. Full specification with pinout and replacement list

HM4302 Datasheet. Specs and Replacement

Type Designator: HM4302 📄📄

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 27 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 460 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm

Package: SOP8

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HM4302 datasheet

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N-Channel Enhancement Mode Power MOSFET DESCRIPTION The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =30V,ID = A RDS(ON) ... See More ⇒

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CHENMKO ENTERPRISE CO.,LTD CHM4301JGP SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 40 Volts CURRENT 20 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SO-8 FEATURE * Small flat package. ( SO-8 ) * Super high density cell design for extremely low RDS(ON). ( ) 4.06 0.160 ( ) 3.70 0.146 * High pow... See More ⇒

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CHENMKO ENTERPRISE CO.,LTD CHM4301PAGP SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 40 Volts CURRENT 20 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D-PAK(TO-252) FEATURE * Small flat package. ( TO-252 ) * Super high density cell design for extremely low RDS(ON). .094 (2.40) .280 (7.10) * Hi... See More ⇒