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HM4302 Spec and Replacement


   Type Designator: HM4302
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 27 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 460 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
   Package: SOP8

 HM4302 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HM4302 Specs

 ..1. Size:447K  cn hmsemi
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HM4302

N-Channel Enhancement Mode Power MOSFET DESCRIPTION The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =30V,ID = A RDS(ON) ... See More ⇒

 0.1. Size:667K  cn hmsemi
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HM4302

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 9.1. Size:101K  chenmko
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HM4302

CHENMKO ENTERPRISE CO.,LTD CHM4301JGP SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 40 Volts CURRENT 20 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SO-8 FEATURE * Small flat package. ( SO-8 ) * Super high density cell design for extremely low RDS(ON). ( ) 4.06 0.160 ( ) 3.70 0.146 * High pow... See More ⇒

 9.2. Size:102K  chenmko
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HM4302

CHENMKO ENTERPRISE CO.,LTD CHM4301PAGP SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 40 Volts CURRENT 20 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D-PAK(TO-252) FEATURE * Small flat package. ( TO-252 ) * Super high density cell design for extremely low RDS(ON). .094 (2.40) .280 (7.10) * Hi... See More ⇒

Detailed specifications: HM40P04K , HM40P06K , HM4110 , HM4110T , HM4240 , HM4260 , HM4264 , HM4264B , 75N75 , HM4302B , 2SK68A , CRJF390N65GC , HCA60R150T , MDP10N027TH , NVHL055N60S5F , OSG60R074HZF , OSG60R074FZF .

Keywords - HM4302 MOSFET specs

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